BUH1015HI high voltage fast-switching npn power transistor n stmicroelectronics preferred salestype n high voltage capability (> 1500 v) n very high switching speed n fully insulated package (u.l. compliant) for easy mounting applications: n horizontal deflection for high-end colour tv and 19o monitors description the BUH1015HI is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. the buh series is designed for use in horizontal deflection circuits in televisions and monitors. internal schematic diagram april 2002 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 700 v v ebo emitter-base voltage (i c =0) 10 v i c collector current 14 a i cm collector peak current (t p <5ms) 18 a i b base current 8 a i bm base peak current (t p <5ms) 11 a p tot total dissipation at t c =25 o c70w v is ol insulation withstand voltage (rms) from all three leads to exernal heatsink 2500 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c isowatt218 1 2 3 ? 1/7
thermal data r thj-case thermal resistance junction-case max 1.8 o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce = 1500 v v ce = 1500 v t j =125 o c 0.2 2 ma ma i ebo emitter cut-off current (i c =0) v eb =5v 100 m a v ceo(sus ) * collector-emitter sustaining voltage (i b =0) i c = 100 ma 700 v v ebo emitter-base voltage (i c =0) i e =10ma 10 v v ce(sat) * collector-emitter saturation voltage i c =10a i b =2a 1.5 v v be(s at) * base-emitter saturation voltage i c =10a i b =2a 1.5 v h fe * dc current gain i c =10a v ce =5v i c =10a v ce =5v t j =100 o c 7 5 10 14 t s t f resistive load storage time fall time v cc =400v i c =10a i b1 =2a i b2 =-6a 1.5 110 m s ns t s t f inductive load storage time fall time i c = 10 a f = 31250 hz i b1 =2a i b2 =-6a v ceflyback =1200sin ? ? ? p 5 10 6 ? ? ? tv 4 220 m s ns t s t f inductive load storage time fall time i c =6a f=64khz i b1 =1a v beoff =-2v v ceflyback =1100sin ? ? ? p 5 10 6 ? ? ? tv 3.7 200 m s ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUH1015HI 2/7
safe operating area derating curve collector emitter saturation voltage thermal impedance dc current gain base emitter saturation voltage BUH1015HI 3/7
power losses at 64 khz switching time inductive load at 64khz (see figure 2) in order to saturate the power switch and reduce conduction losses, adequate direct base current i b1 has to be provided for the lowest gain h fe at t j = 100 o c (line scan phase). on the other hand, negative base current i b2 must be provided the transistor to turn off (retrace phase). most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of i b2 which minimizes power losses, fall time t f and, consequently, t j .a new set of curves have been defined to give total power losses, t s and t f as a function of i b1 at 64 khz scanning frequencies for choosing the optimum drive. the test circuit is illustrated in figure 1. the values of l and c are calculated from the following equations: 1 2 l ( i c ) 2 = 1 2 c ( v cefly ) 2 w= 2 p f = 1 ``` ` l c where i c = operating collector current, v cefly = flyback voltage, f= frequency of oscillation during retrace. base drive information reverse biased soa BUH1015HI 4/7
figure 1: inductive load switching test circuit. figure 2: switching waveforms in a deflection circuit BUH1015HI 5/7
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.211 0.222 c 3.30 3.80 0.130 0.150 d 2.90 3.10 0.114 0.122 d1 1.88 2.08 0.074 0.082 e 0.75 0.95 0.030 0.037 f 1.05 1.25 0.041 0.049 f2 1.50 1.70 0.059 0.067 f3 1.90 2.10 0.075 0.083 g 10.80 11.20 0.425 0.441 h 15.80 16.20 0.622 0.638 l 9 0.354 l1 20.80 21.20 0.819 0.835 l2 19.10 19.90 0.752 0.783 l3 22.80 23.60 0.898 0.929 l4 40.50 42.50 1.594 1.673 l5 4.85 5.25 0.191 0.207 l6 20.25 20.75 0.797 0.817 n 2.1 2.3 0.083 0.091 r 4.6 0.181 dia 3.5 3.7 0.138 0.146 p025c/a isowatt218 mechanical data - weight : 4.9 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.8 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 m m BUH1015HI 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUH1015HI 7/7
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